报告摘要：By Increasing the switching frequency of power converters, we can improve power density, reduce transient response times, and enhance the system's level of integration. At frequencies above few MHz, however, maintaining high efficiency over a wide load present significant challenges. Replacing legacy Si devices with wide-bandgap (WBG) power semiconductors, such as GaN and SiC makes MHz switching easier to accomplish, but this replacement alone is far from sufficient. In this talk, we discuss some of the circuit techniques that can lead to efficient, compact, and high-frequency power converters using both WBG devices and low-cost Si devices.

报告人简介：Juan Rivas is an Assistant Professor at Stanford’s Electrical Engineering department. Before, he served as an Assistant Professor at the University of Michigan and worked for GE Global Research in the high-frequency power electronics group. He has extensive experience in the design of dc-dc power converters working at MHz frequencies. He has published peer-reviewed work on power converters reaching up to 100 MHz using Si and WBG devices. He obtained his doctoral degree from MIT in 2006. His research interests include power electronics, resonant converters, resonant gate drive techniques, high-frequency magnetics, and finding new applications for power converters.